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BUK71/7908-40AIE
TrenchPLUS standard level FET
Rev. 02 -- 24 October 2003 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection.
1.2 Features
s ESD protection s Integrated current sensor s Q101 compliant s Standard level compatible.
1.3 Applications
s Variable Valve Timing for engines s Electrical Power Assisted Steering.
1.4 Quick reference data
s VDS 40 V s ID 117 A s RDSon = 6 m (typ) s ID/Isense = 500 (typ).
2. Pinning information
Table 1: Pin 1 2 3 4 5 mb Pinning - SOT426 and SOT263B, simplified outline and symbol Simplified outline
mb mb
Description gate (g) sense current (Isense) drain (d) Kelvin source source (s) mounting base; connected to drain (d)
Symbol
d
12345
g
Front view
MBK127
MBL368
Isense
s Kelvin source
1
5
MBL263
SOT426 (D2-PAK)
SOT263B (TO-220AB)
Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
3. Ordering information
Table 2: Ordering information Package Name BUK7108-40AIE BUK7908-40AIE D2-PAK TO-220 Description Version Plastic single-ended surface mounted package; 5 leads (one lead cropped) SOT426 Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-leads SOT263B Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot IGS(CL) Tstg Tj IDR IDRM EDS(AL)S peak drain current total power dissipation gate-source clamping current storage temperature junction temperature reverse drain current (DC) peak reverse drain current non-repetitive drain-source avalanche energy Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 75 A; VDS 40 V; VGS = 10 V; RGS = 50 ; starting Tj = 25 C Human Body Model; C = 100 pF; R = 1.5 k
[1] [2] [1] [2] [2]
Conditions RGS = 20 k
Min -55 -55 -
Max 40 40 20 117 75 75 468 221 10 50 +175 +175 117 75 468 0.63
Unit V V V A A A A W mA mA C C A A A J
Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 continuous tp = 5 ms; = 0.01
Source-drain diode
Avalanche ruggedness
Electrostatic discharge Vesd electrostatic discharge voltage; all pins 6 kV
[1] [2]
Current is limited by power dissipation chip rating. Continuous current is limited by package.
9397 750 12086
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 24 October 2003
2 of 16
Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
120 Pder (%) 80
03na19
120 ID (A)
03ni93
80
Capped at 75 A due to package
40
40
0 0 50 100 150 200 Tmb (C)
0 0 50 100 150 200 Tmb (C)
P tot P der = ---------------------- x 100% P
tot ( 25 C )
VGS 10 V
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Continuous drain current as a function of mounting base temperature.
103 ID (A)
03nl55
Limit RDSon = VDS / ID
tp = 10 s
102 100 s
1 ms Capped at 75 A due to package 10 DC 10 ms 100 ms
1 1 10 VDS (V) 102
Tmb = 25 C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12086
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 24 October 2003
3 of 16
Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
5. Thermal characteristics
Table 4: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient SOT263B SOT426 Rth(j-mb) thermal resistance from junction to mounting base vertical in still air minimum footprint; mounted on a PCB Figure 4 60 50 K/W K/W Conditions Min Typ Max Unit
0.68 K/W
5.1 Transient thermal impedance
1 Zth(j-mb) (K/W)
0.2
03nj21
= 0.5
10-1
0.1 0.05 0.02
10-2 P
single shot
=
tp T
tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 12086
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 24 October 2003
4 of 16
Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
6. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 40 V; VGS = 0 V Tj = 25 C Tj = 175 C V(BR)GSS IGSS gate-source breakdown voltage gate-source leakage current IG = 1 mA; -55 C < Tj < 175 C VGS = 10 V; VDS = 0 V Tj = 25 C Tj = 175 C RDSon drain-source on-state resistance VGS = 10 V; ID = 50 A; Figure 7 and 8 Tj = 25 C Tj = 175 C RD(Is)on drain-Isense on-state resistance VGS = 10 V; ID = 25 mA; Figure 16 Tj = 25 C Tj = 175 C ID/Isense ratio of drain current to sense VGS > 10 V; Rsense = 0 ; current -55 C < Tj < 175 C total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time VDS = 30 V; RL = 1.2 ; VGS = 10 V; RG = 10 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 VGS = 10 V; VDS = 32 V; ID = 25 A; Figure 14 1.59 3.02 450 1.87 3.55 500 2.20 4.18 550 6 8 15.2 m m 22 300 10 nA A 20 0.1 22 10 250 A A V 2 1 3 4 4.4 V V V 40 36 V V Min Typ Max Unit Static characteristics
Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf 78 14 34 2670 900 560 19 76 121 122 84 16 36 3140 1053 653 nC nC nC pF pF pF ns ns ns ns
9397 750 12086
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 24 October 2003
5 of 16
Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
Table 5: Characteristics...continued Tj = 25 C unless otherwise specified. Symbol Ld Parameter internal drain inductance Conditions measured from upper edge of drain mounting base to center of die measured from source lead to source bond pad; lead length 6 mm IS = 40 A; VGS = 0 V; Figure 17 IS = 20 A; dIS/dt = -100 A/s VGS = -10 V; VDS = 30 V Min Typ 2.5 Max Unit nH
Ls
internal source inductance
-
7.5
-
nH
Source-drain diode VSD trr Qr source-drain (diode forward) voltage reverse recovery time recovered charge 0.85 55 30 1.2 V ns nC
9397 750 12086
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 24 October 2003
6 of 16
Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
400 ID (A) 300 10 20 9
03nn70
16 RDSon () 12
03nn72
Label is VGS (V) 8.5 8 7.5 7
200 6.5 6 100 5.5 5 4.5 4 0 0 2 4 6 8 10 VDS (V)
8
4
0 4 8 12 16 VGS (V) 20
Tj = 25 C; tp = 300 s
Tj = 25 C; ID = 50 A
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values.
20 RDSon (m) 16 5.5 6 6.5 7 7.5
03nn71
2 a
03ni30
Label is VGS (V)
1.6
8
1.2
12
0.8
8
10 20
0.4
4 0 100 200 300 ID (A) 400
0 -60 0 60 120 Tj (C) 180
Tj = 25 C; tp = 300 s
R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
9397 750 12086
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 24 October 2003
7 of 16
Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
5 VGS(th) (V) 4 max
03aa32
10-1 ID (A) 10-2
03aa35
3
typ
10-3
min
typ
max
2
min
10-4
1
10-5
0 -60 0 60 120 Tj (C) 180
10-6 0 2 4 VGS (V) 6
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of junction temperature.
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
80 gfs (S) 60
03nn73
5000 C (pF) 3750 Ciss
03nn76
40
2500
Crss
Coss
20
1250
0 0 25 50 75 I (A) 100 D
0 10-1 1 10 VDS (V) 102
Tj = 25 C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 12086
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 24 October 2003
8 of 16
Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
100 ID (A) 75
03nn74
10 VGS (V) 8 VDS = 14 V 6 32 V
03nn77
50 175 C 4
25 Tj = 25 C 2
0 0 2 4 6 VGS (V) 8
0 0 25 50 75 QG (nC) 100
VDS = 25 V
Tj = 25 C; ID = 25 A
Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of gate charge; typical values.
600 ID/Isense 550
03nn79
6 RD(Is)on ()
03nn78
4
500
2 450
400 4 8 12 16 VGS (V) 20
0 4 8 12 16 VGS (V) 20
ID = 25 A; Rsense = 0
Isense = 25 mA
Fig 15. Drain-sense current ratio as a function of gate-source voltage; typical values.
Fig 16. Drain-Isense on-state resistance as function of gate-source voltage; typical values.
9397 750 12086
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 24 October 2003
9 of 16
Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
100 ID (A) 75
03nn75
50 175 C
25 Tj = 25 C
0 0.0 0.4 0.8 VSD (V) 1.2
VGS = 0 V
Fig 17. Drain current as a function of source-drain diode voltage; typical values.
9397 750 12086
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 24 October 2003
10 of 16
Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
7. Package outline
Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads (one lead cropped) SOT426
A E A1
D1 mounting base
D
HD
3 1
Lp
2
4
5
b
c Q
e
e
e
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 1.70 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20
OUTLINE VERSION SOT426
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 98-12-14 99-06-25
Fig 18. SOT426 (D2-PAK).
9397 750 12086 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 24 October 2003
11 of 16
Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220
SOT263B
E p1 p A A1 q D1
D
mounting base
L1 Q m L L2
1
e b
5
wM c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.85 0.70 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 1.7 L 15.0 13.5 L1
(1)
L2
(2)
m 0.8 0.6
p 3.8 3.6
p1 4.3 4.1
q 3.0 2.7
Q 2.6 2.2
w 0.4
2.4 1.6
0.5
Notes 1. Terminal dimensions are uncontrolled in this zone. 2. Positional accuracy of the terminals is controlled in this zone. OUTLINE VERSION SOT263B REFERENCES IEC JEDEC 5-lead TO-220 EIAJ EUROPEAN PROJECTION ISSUE DATE 01-01-11
Fig 19. SOT263B (TO-220).
9397 750 12086 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 24 October 2003
12 of 16
Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
8. Soldering
handbook, full pagewidth
10.85 10.60 10.50 1.50 7.50 7.40 1.70
2.25 2.15
8.15
8.35
8.275 1.50
4.60
0.30 4.85
5.40 8.075
7.95
3.00
0.20
solder lands solder resist occupied area solder paste
1.70 (2x)
3.40 8.15
0.90 1.00
MSD058
Dimensions in mm.
Fig 20. Reflow soldering footprint for SOT426.
9397 750 12086
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 24 October 2003
13 of 16
Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
9. Revision history
Table 6: Rev Date 02 20031024 Revision history CPCN Description Product data; (9397 750 12086) Modifications:
* IGSS limit changed in Table 5 * Section 3 "Ordering information" added * Correction to title of Figure 19
01 20030819 Product data; (9397 750 11695)
9397 750 12086
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 24 October 2003
14 of 16
Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
10. Data sheet status
Level I II Data sheet status[1] Objective data Preliminary data Product status[2][3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
13. Trademarks
TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V.
12. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
9397 750 12086
Fax: +31 40 27 24825
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 24 October 2003
15 of 16
Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
(c) Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 24 October 2003 Document order number: 9397 750 12086

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